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PD- 91499B
IRLL014N
HEXFET ? Power MOSFET
l
l
l
l
l
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
G
D
V DSS = 55V
R DS(on) = 0.14 ?
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
Absolute Maximum Ratings
S
S O T -2 2 3
I D = 2.0A
Parameter
Max.
Units
I D @ T A = 25°C
Continuous Drain Current, V GS @ 10V**
2.8
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 25°C
V GS
E AS
I AR
E AR
dv/dt
T J, T STG
Continuous Drain Current, V GS @ 10V*
Continuous Drain Current, V GS @ 10V*
Pulsed Drain Current ?
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy ?
Avalanche Current ?
Repetitive Avalanche Energy ? *
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
2.0
1.6
16
2.1
1.0
8.3
± 16
32
2.0
0.1
7.2
-55 to + 150
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JA
R θ JA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
90
50
120
60
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
1
1/25/99
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相关代理商/技术参数
IRLL014NTRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 2.8A 4-Pin(3+Tab) SOT-223 T/R
IRLL014NTRPBF 功能描述:MOSFET MOSFT 55V 2A 140mOhm 9.5nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLL014NTRPBF 制造商:International Rectifier 功能描述:N CHANNEL MOSFET 55V 2A SOT-223
IRLL014NTRPBF-CUT TAPE 制造商:IR 功能描述:Single N-Channel 55 V 2.1 W 9.5 nC Hexfet Power Mosfet Surface Mount - SOT-223-3
IRLL014PBF 功能描述:MOSFET N-Chan 60V 2.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLL014TR 功能描述:MOSFET N-Chan 60V 2.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLL014TRA 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET
IRLL014TRPBF 功能描述:MOSFET N-Chan 60V 2.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube